Thin Film Deposition

Physical Vapor Deposition (PVD)

Sputtering, evaporation, and depositing metal films

Sputtering

Sputtering

Sputtering is the dominant PVD technique in semiconductor manufacturing. It physically ejects atoms from a solid target material using energetic ion bombardment:

  • A plasma is created from an inert gas (usually argon)
  • Argon ions are accelerated toward the target (a disk of the desired material)
  • Ions knock atoms off the target surface (like billiard balls)
  • Ejected atoms travel across the vacuum chamber and deposit on the wafer

Common sputtered films in semiconductor fabs:

  • TaN/Ta: Barrier/liner for copper interconnects
  • Copper seed: Thin copper layer for electroplating
  • Titanium/TiN: Contact barriers and hard masks
  • Aluminum: Bond pads and some interconnect layers

Key Concept: Magnetron Sputtering

Modern PVD tools use magnetron sputtering — magnets behind the target confine the plasma close to the target surface, dramatically increasing deposition rate and efficiency. Ionized PVD (iPVD) goes further, ionizing the sputtered atoms for better directionality.

Knowledge Check

Knowledge Check

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What gas is typically used to create plasma in sputtering?